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MZ-C-500/1000-5-100E/200E-G-stack Diode Laser (Conduction Cooling)

Conduction-cooled QCW stacked array

Product Name: 500W/1000W Conduction cooled diode laser stack

Module No.
MZ-C-500/1000-5-100E/200E-Gstack

MZ-C-500-5-100E-G-stack, MZ-C-1000-5-100E-G-stack, MZ-C-500-5-200E-G-stack, and MZ-C-1000-5-200E-G-stack are conductively cooled laser diode arrays. The laser arrays benefit from a fully developed technology, designed for improved efficiency (up to 50 % @ 808 nm) and reliable operation (above 10 billion shots). 

  • QCW operation
  • 100 W /200 W QCW per diode bar
  • Standard wavelength 808 nm (multi-wavelength upon request 795 to 830 nm, 880 nm, 9xx nm)
  • Space-qualified technology (vacuum, irradiation)
  • Low thermal resistance assembly package
  • Mechanically robust, shock and vibration resistant

Specification

Model No.MZ-C-500/1000-5-100E/200E-Gstack
Optical parameters
Output Peak power(W)500/1000
Center Wavelength at 65 °C(nm)²808
Number of bars in one stack5
Each Bar power(W)100/200
Bar pitch(mm)¹0.43/0.73/1.13
Center Wavelength Variation at 65 °C(nm)²±2
Typical Spectral Bandwidth (FWHM)<3
Divergence(degree)(FWHM)<39⊥<10‖
PolarizationTE
Wavelength shift(nm/℃)~0.28
Electrical Parameters
Working modeQCW
Maximum Duty Cycle(%)≦2%
Pulse Length(us)50~250
Frequency(Hz)1~100
Operation Current(A)≦200
Operating Voltage(V)≦10
Typical Slope(W/A)>1.1
Electro-optic Conversion Efficiency(%)>50
Thermal parameters
Operation Temperature(℃)-40~60
Storage Temperature(℃)-50~85
Storage humidity(%)<70
CoolingConduction cooled
Note:
1. Bar pitch is from 0.43-3mm depend on different designs.
2. The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.
3. The above parameters are measured at the heat sink temperature of 65°C.
4. Heat sink structure can be customized according to the customer’s special requirements.

Drawing

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